elektronische bauelemente 2SB1197K -0.8 a, -40 v pnp epitaxial planar transistor 31-dec-2010 rev. c page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen and lead free features low v ce(sat) .v ce(sat ) Q -0.5v(i c / i b = -0.5a /-50ma) i c =-0.8a mechanical data case: sc-59, weight: 0.008 grams(approx.) classification of h fe product-rank 2SB1197K-q 2SB1197K-r range 120~270 180~390 marking ahq ahr package information package mpq leadersize sc-59 3k 7 inch absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol ratings unit collector to base voltage v cbo -40 v collector to emitter voltage v ceo -32 v emitter to base voltage v ebo -5 v collector currrent i c -800 ma total power dissipation pc 200 mw junction & storage temperature t j , t stg +150, -55 ~ +150 electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage bv cbo -40 - - v i c =-50 a collector-emitter breakdown voltage bv ceo -32 - - v i c =-1ma emitter-base breakdown voltage bv ebo -5 - - v i e =-50 a collector cut-off current i cbo - - -0.5 a v cb =-20v emitter cut-off current i ebo - - -0.5 a v eb = -4v collector-emitter saturation voltage v ce(sat) - - -0.5 v i c =-500ma, i b =-50ma dc current gain h fe 120 - 390 v ce =-3v, i c =-100ma transition frequency f t 50 200 - mhz v ce =-5v, i c =-50ma, f=100mhz collector output capacitance c ob - 12 30 pf v cb =-10v, i e =0, f=1mhz sc-59 top view a l c b d g h j f k e 1 2 3 1 2 3 millimeter millimeter ref. min. max. ref. min. max. a 2.70 3.10 g 0.10 ref. b 2.25 3.00 h 0.40 ref. c 1.30 1.70 j 0.10 0.20 d 1.00 1.40 k 0.45 0.55 e 1.70 2.30 l 0.85 1.15 f 0.35 0.50
elektronische bauelemente 2SB1197K -0.8 a, -40 v pnp epitaxial planar transistor 31-dec-2010 rev. c page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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